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Recent Advances in PMOS Negative Bias Temperature Instability: Characterization and Modeling of Device Architecture, Material, and Process Impact
$21.80
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- Explores the latest research on PMOS NBTI, a critical reliability issue in modern CMOS technology.
- Provides a comprehensive overview of the characterization and modeling of NBTI in PMOS devices.
- Covers the impact of device architecture, material properties, and process conditions on NBTI.
- Presents advanced modeling techniques for predicting NBTI behavior and optimizing device design.
- Offers practical insights for improving the reliability of PMOS devices in real-world applications
Condition: New original from publisher
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